Modification of dislocation concentration in GaN:Si films by non-thermal microwave radiation treatment

DOI: 10.62564/M4-RR1233

Roman Redko^1,2, Grigorii Milenin¹, Nadiia Safriuk-Romanenko¹, Svitlana Redko<sup>1

1</sup>V. Lashkaryov Institute of Semiconductor Physics of National Academy of Science of Ukraine
²State University of Telecommunications, Ukraine


Both photoluminescence spectra and X-ray diffraction of GaN:Si were measured during long term (one month) after processing in microwave field (2.45 GHz, 10 s, p=7.5W/cm2). It was obtained non-monotonous changes of detected characteristics of studied samples. Due to small energy obtained in chosen field alternative resonant mechanism was proposed to explain observed features. Transformation of the defect subsystem (impurity-defect complexes destruction and/or detachment and displacement of dislocations) could be realized due to resonant phenomena related with coincidence between the electromagnetic wave frequency and proper frequencies of dislocation oscillations [1] and ion-plasma oscillations of impurity ions [2]. At the resonant frequency with small attenuation, the amplitude and, therefore, the oscillation energy increase sharply. As soon as the oscillation energy becomes higher than the binding energy of defects, the noted changes occur in the state of the latter. The observed features of long-term changes in the PL band intensities and dislocations concentration for the semiconductors under investigation after treatments in microwave field has been well described by the offered physical-statistical model of the behavior of defects, which is based on the idea that the corresponding physical processes can be described as random events. This physical-statistical approach allowed us to estimate the diffusion coefficients of defects in epitaxial films of semiconductor compounds. Obtained information will be value for understanding sensor system natural aging due to presence external microwave fields

Keywords
microwave radiation, gallium nitride, dislocations

Acknowledgments
This work was supported by the National research foundation of Ukraine (Project 2022.01/0126)

References
[1] G.V. Milenin, R.A. Redko, Physical mechanisms and models of the long-term transformations in radiative recombination observed in n-GaAs under microwave irradiation, SPQEO, 2016. V.19, No. 1. P.14-22. [2] G.V. Milenin, R.A. Redko, Transformation of structural defects in semiconductors under action of electromagnetic and magnetic fields causing resonant phenomena, SPQEO, 2019. V.22, No1. P.39-46.