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Effect of TiC additive on elasticity and electrical resistivity of reaction sintered nanosized SiC matrix composites
DOI: 10.62564/M4-OV2118
Oleksandr Vdovychenko1, Mykola Gadzyra1, Anatoliy Kolesnykov1, Neonila Tkachuk1, Ihor Hnylytsia2
1Frantsevich Institute for Problems of Materials Science National Academy of Science of Ukraine 2Ivano-Frankivsk National Technical University of Oil and Gas, Ukraine
Silicon carbide (SiC) is one of the most important engineering ceramic because of its good thermal conductivity, oxidation and corrosion resistance, and mechanical properties. The need in reliable electronic devices for operation under shock cyclic loads and shear stresses requires the study of a combination of electrical and mechanical properties of SiC-based ceramics. In contrast to high-cost hot sintering, pressureless sintering and liquid-state sintering are used to obtain relatively low cost SiC-based products of complicated shape with excellent mechanical properties. [1]
SiC-matrix composite obtained by reaction sintering of nanosized silicon carbide powders with various amounts of nanosized titanium carbide (from 1 to 8 wt% in increments of 1%) introduced into the composition of the initial charge were studied. The process of infiltration of porous blanks was also carried out in an induction furnace at a temperature of 2273K. Elastic characteristics were calculated based on the results of determining the density of samples using Archimedes method and the velocities of longitudinal and transverse acoustic waves using the pulse-echo and resonant techniques.
It was established that with an increase in the content of titanium carbide, the specific electrical resistivity of the composites SiC-TiC decreases from 49.4x10-5 Ohm*m to 5.8x10-5 Ohm*m, instead, the elastic characteristics change non-monotonically. Young modulus E and shear modulus G tend to increase in the range of 1 to 4% TiC, followed by a decrease. The values of the Young modulus E vary in the range of 256 to 348 GPa, and the shear modulus G - in the range of 104 GPa to 151 GPa. Instead, the values of Poisson ratio change with the opposite trend in the range from 0.15 to 0.28 and have a minimum for the material SiC-5% TiC. Possible reasons for the specified changes in electrical resistivity and elastic characteristics are discussed.
Keywords
silicon carbide, composite, elasticity, resistivity
Acknowledgments
Not provided
References
[1] Y.-W. Kim, Y.-H. Kim and K. J. Kim, Electrical properties of liquid-phase sintered
silicon carbide ceramics: a review, Crit. Rev. Solid States Mater. Sci., 2020, V.45, P.66-84.
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